High-Power Electronics

High Power Electronics

High Power Electronics

The Electric Vehicle (EV) Industry is driving the transition from silicon-based power electronics to wide bandgap (WBG) semiconductors such as silicon carbide (SiC) and gallium nitride (GaN). In particular, silicon carbide power devices such as metal–oxide–semiconductor field-effect transistors (MOSFETs), Schottky barrier diodes (hot-carrier diodes), and power modules, have displaced their silicon-based counterparts in EV drivetrains due to overall size, reliability, and energy efficiency. Demand for silicon carbide power devices is tracking the exponential growth of the EV industry. Added demand from renewable energy technologies such as wind and solar has seen the silicon carbide power device market explode in recent years. With their ability to withstand greater voltages, frequencies, and temperatures than classic silicon-based devices, the growth trend in WBG devices is expected to continue for many years to come.

WBG semiconductors have the potential to revolutionize many markets, enable new markets (EVs, Renewable Energy), and upgrade older ones (Rail and Motor Drives). Applications for silicon carbide/gallium nitride circuits within the transportation sector also include the electrification of trains, ships, and aircraft. Renewable energy applications such as solar photovoltaics and wind energy will benefit from silicon carbide/gallium nitride circuitry by minimizing conversion losses and increasing overall energy efficiency. Silicon carbide/gallium nitride is also expected to impact the telecommunications market including 5G wireless devices as silicon carbide/gallium nitride enables smaller, lighter circuits that can withstand higher voltages with less thermal restriction.

What can CVD Equipment Corporation do for the High Power Electronics Industry?

CVD Equipment Corporation has established a leadership role in manufacturing the highest quality silicon carbide and gallium nitride related semiconductor production systems. Our highly engineered equipment delivers the technology that will build tomorrow’s high-powered electric future.

CVDE has over 40 years combined knowledge in physical, electrical, and process equipment engineering built into our systems to serve your high production needs. Supporting the industry with Physical Vapor Transport, Annealing, Epitaxial Growth, and Hydride Vapor Phase Epitaxy Systems to Manufacturers and leading research and academic institutions.

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Physical Vapor Transport (PVT) systems are used to grow various crystals such as silicon carbide and aluminum nitride (AlN) which are subsequently processed into wafers to support high-power electronics applications. The demand for silicon carbide bulk crystals (boules) and epi-ready wafers continues to accelerate for electric vehicles, energy, and industrial applications. Today, the silicon carbide device market accounts for 2 Billion USD, and market forecasts show no signs of slowing down, growing at a CAGR of up to 35% through 2026 (reported in Needham Industry Update Oct 6, 2022).

PVT System Features & Options

  • Physical Vapor Transport (PVT) systems for growth of 150 mm and 200 mm single crystal boules
  • Crystal Growth & Annealing
  • RF Induction Heating upwards of 2500 °C
  • Crucible Rotation
  • Automated Moving RF Coil
  • Pyrometer Temperature Controls maintain temperatures within half a degree
  • Pyrometer Alignment via Remote Control Box
  • Automatic Crucible Load/Unload
  • Vacuum System with Atmospheric Bypass
  • Chamber Double O-ring Seal Integrity Monitoring
  • CVDWinPrC™ system control software for real-time process control, data logging, and process recipe editing
  • Safety System
  • Robust Production System with Enhanced Process Controls
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Hydride Vapor Phase Epitaxy (HVPE) Systems are used to grow polycrystalline bulk gallium nitride (GaN) as the precursor for monocrystalline gallium nitride wafer production. Our HVPE systems are also used to grow thick epitaxial single crystal layers of doped and undoped gallium nitride, Aluminum Nitride (AlN), Gallium Arsenide (GaAs), Indium Phosphide (InP), and other binary and ternary systems where a metal halide is reacted with one or several hydrides to form a solid crystal. CVDE understands the needs of our customer base and prides itself on the wide array of system features and options we can offer; this sets us apart from other OEMs. We’ve artfully engineered so you can deliver better results.

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HVPE System Features & Options

  • Designed to accommodate the end user’s configuration requirements
  • CVDWinPrC™ system control software for real-time process control, data logging, and process recipe editing
  • Multi-zone furnace (resistive or RF induction heated)
  • Vertical process tube with pre chambers for chlorination
  • Substrate rotation for improved deposition uniformity
  • Loading station with optional nitrogen-purged glovebox
  • Optional gas delivery cabinets
  • State-of-the-art safety enhancement control measures
  • Optional exhaust gas emission treatment
  • Configured for optimal growth parameters/conditions for a range of doped and undoped III/V epitaxial crystals, including GaN, GaAs, AlN, InP etc.
  • Chlorination chambers for dopant chlorides available
  • Dual chamber design for abrupt multilayer deposition available

What differentiates CVD Equipment Corporation from the competition?

Our commitment to provide industries with the safest and most reliable Physical Vapor Transport (PVT), and Hydride Vapor Phase Epitaxy (HVPE) systems through modular design concepts of panels, controls architecture, and cabinet enclosures.

Our drive to provide our customers with a means to profitable revenue streams.

CVD Equipment has refined the physical vapor transport process beginning with the crystal growth to ensure high volume production. We pride ourselves on our skillfully engineered systems crafted to ensure pristine crystal growth process that yields the highest quality boule on the market today. This is achieved through robust thermal controls that maintain temperatures within half a degree, multi pyrometers for real-time digital monitoring of crystal growth with the ease of a remote-control box for pyrometer positioning and alignment.

CVD Equipment has enhanced the Hydride Vapor Phase Epitaxy process configured to rotate the substrate for improved uniformity and selected area deposition to ensure the growth of thick epitaxial single crystal layers.

Our dedication to customer satisfaction has brought CVDE to the forefront as a leader in global equipment installations, distribution, and support around the globe.