Atomic Layer Deposition (ALD) Systems
ALD is a thin film deposition process that allows for atomic layer thickness resolution, excellent conformity of high aspect ratio surfaces, and pinhole-free layers. This is achieved by sequential formation of atomic layers in a self-limiting reaction.
ALD is commonly used in the semiconductor industry for high-k dielectric films in CMOS processing, memory devices, MEMS, and sensors. ALD systems are used for development of protective and functional coatings in fuel cells and other applications requiring corrosion or wear resistance. They are also used to coat high aspect ratio structures like nanowires and nanotubes for next generation device development.
Oxides: Al2O3, TiO2, SnO, HfO2, ZnO, Fe2O3
Nitrides: TiN, TaN, WN
Metals: Cu, Ru, Ir, W and more.
powered by CVDWinPrC™
Operated through our CVDWinPrC™ process control software, the systems automatically log data and graphically show time-dependent values of user-selected parameters. CVDWinPrC™ also allows users to load preprogrammed recipes, modify, check and create new recipes, and view realtime or saved process data.
The systems have application configured safety protocols embedded into relay logic, PLC, and CVDWinPrC™ software.