CVD Equipment's laboratory, research and production Rapid Thermal Processing systems can be configured for Oxidation, Nitridation, Annealing, Silicon Dioxide, Silicon Nitride, Contact Alloying, Tin Oxide, GaAs Implant Activation, PSG and BPSG Reflow, Silicon Dielectrics and many others processes. System features can include:

• Atmospheric and Reduced Pressure Systems to process up to 8" diameter wafers.
• Single and Multizone systems using orthogonal linear, parallel linear or axisymmetrical infrared lamps.
• Process temperatures from 400 to 1300 degrees Celsius.
• Fast response and low thermal mass allows temperature ramping of >100 degrees Celsius/second.
• Semi-Automatic and full Automatic Microprocessor Control systems.
- Semi-Automatic system provides multiple, programmable, real-time control of temperature ramping profiles, soaks and timely switching of up to 8 digital outputs.
- Full Automatic system uses a Pentium PC for real-time control and display of analog and digital functions, i.e. temperatures, gas flows, pressures, valves, etc. User friendly software allows recipes to be written and executed with simple commands.
• Atmospheric (APCVD), Low Pressure (LPCVD), Ultra High Vacuum (UHVCVD) operation.
• High purity gas controls feature 316L stainless steel orbital welded gas lines, VCR connections, mass flow controllers, sub-micron filtration, air-operated Nupro valves and inject/run manifolds.
• Stainless steel, water cooled, Viton O-Ring sealed End Cap assembly mates with the high purity quartz tube or axially symmetric chamber. Systems have dedicated gas injectors and a positive exhaust line.
• High Vacuum Loadlock available.